View PSMN038-100K_2176303.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

PSMN038-100K n-channel trenchmos siliconmax standard level fet rev. 02 ? 25 november 2009 product data sheet 1. product profile 1.1 general description siliconmax standard level n-ch annel enhancement mo de field-effect tran sistor (fet) in a plastic package using trenchmos technology. this product is designed and qualified for use in computing, communications, consum er and industrial applications only. 1.2 features and benefits ? low conduction losses due to low on-state resistance ? suitable for high frequency applications due to fast switching characteristics 1.3 applications ? computer motherboards ? dc-to-dc convertors ? switched-mode power supplies 1.4 quick reference data table 1. quick reference symbol parameter conditions min typ max unit v ds drain-source voltage t j 25 c; t j 150 c - - 100 v i d drain current t sp =80c; see figure 1 and 3 --6.3a p tot total power dissipation t sp =80c; see figure 2 --3.5w dynamic characteristics q gd gate-drain charge v gs =10v; i d =6.3a; v ds =50v; t j =25c; see figure 11 - 16 21.5 nc static characteristics r dson drain-source on-state resistance v gs =10v; i d =5.2a; t j =25c; see figure 9 and 10 - 3338m ?
PSMN038-100K_2 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 02 ? 25 november 2009 2 of 12 nxp semiconductors PSMN038-100K n-channel trenchmos siliconmax standard level fet 2. pinning information 3. ordering information 4. limiting values table 2. pinning information pin symbol description simplified outline graphic symbol 1s source sot96-1 (so8) 2s source 3s source 4g gate 5d drain 6d drain 7d drain 8d drain 4 5 1 8 s d g m bb076 table 3. ordering information type number package name description version PSMN038-100K so8 plastic small outline package; 8 leads; body width 3.9 mm sot96-1 table 4. limiting values in accordance with the absolute maxi mum rating system (iec 60134). symbol parameter conditions min max unit v ds drain-source voltage t j 25 c; t j 150 c - 100 v v gs gate-source voltage -20 20 v i d drain current t sp =80c; see figure 1 and 3 -6.3a i dm peak drain current t sp =25c; t p 10 s; pulsed; see figure 3 -50a p tot total power dissipation t sp =80c; see figure 2 -3.5w t stg storage temperature -55 150 c t j junction temperature -55 150 c source-drain diode i s source current t sp =80c - 3.1 a i sm peak source current t sp =25c; t p 10 s; pulsed - 50 a
PSMN038-100K_2 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 02 ? 25 november 2009 3 of 12 nxp semiconductors PSMN038-100K n-channel trenchmos siliconmax standard level fet fig 1. normalized continuous drain current as a function of solder point temperature fig 2. normalized total power dissipation as a function of solder point temperature fig 3. safe operating area; continuous and peak drain currents as a function of drain-source voltage t sp ( c) 0 200 150 50 100 03aa25 40 80 120 i der (%) 0 t sp ( c) 0 200 150 50 100 03aa17 40 80 120 p der (%) 0 03ad97 1 10 ? 1 10 10 2 i d (a) 10 ? 2 v ds (v) 10 - 1 10 3 10 2 110 t p t p t p t t = d.c. t p = 10 s 100 s 1 ms 10 ms 100 ms r dson = v ds /i d
PSMN038-100K_2 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 02 ? 25 november 2009 4 of 12 nxp semiconductors PSMN038-100K n-channel trenchmos siliconmax standard level fet 5. thermal characteristics table 5. thermal characteristics symbol parameter conditions min typ max unit r th(j-sp) thermal resistance from junction to solder point mounted on a metal clad substrate;see figure 4 --20k/w fig 4. transient thermal impedance from junction to solder point as a function of pulse duration 03ad96 1 10 ? 1 10 10 2 z th(j-sp) (k/w) 10 ? 2 t p (s) 10 ? 4 10 2 10 1 10 ? 3 10 ? 1 10 ? 2 = 0.5 0.2 single pulse 0.1 0.05 0.02 t p t p t p t t =
PSMN038-100K_2 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 02 ? 25 november 2009 5 of 12 nxp semiconductors PSMN038-100K n-channel trenchmos siliconmax standard level fet 6. characteristics table 6. characteristics symbol parameter conditions min typ max unit static characteristics v (br)dss drain-source breakdown voltage i d =250a; v gs =0v; t j = 25 c 100 130 - v v gs(th) gate-source threshold voltage i d =1ma; v ds = v gs ; t j =150c; see figure 8 1.2 - - v i d =1ma; v ds = v gs ; t j =-55c; see figure 8 --6v i d =1ma; v ds = v gs ; t j =25c; see figure 8 2- 4v i dss drain leakage current v ds =100v; v gs =0v; t j =150c --0.5ma v ds =80v; v gs =0v; t j =25c --1a i gss gate leakage current v gs =20v; v ds =0v; t j = 25 c - - 100 na v gs =-20v; v ds =0v; t j = 25 c - - 100 na r dson drain-source on-state resistance v gs =10v; i d =5.2a; t j =150c; see figure 9 and 10 -7688m ? v gs =10v; i d =5.2a; t j =25c; see figure 9 and 10 -3338m ? dynamic characteristics q g(tot) total gate charge i d =6.3a; v ds =50v; v gs =10v; t j =25c; see figure 11 -43-nc q gs gate-source charge - 6.5 - nc q gd gate-drain charge - 16 21.5 nc c iss input capacitance v ds =25v; v gs = 0 v; f = 1 mhz; t j =25c; see figure 12 - 1740 - pf c oss output capacitance - 220 - pf c rss reverse transfer capacitance - 135 - pf t d(on) turn-on delay time v ds =50v; r l =50 ? ; v gs =10v; r g(ext) =6 ? ; t j =25c; i d =1a -1530ns t r rise time - 13 25 ns t d(off) turn-off delay time - 50 80 ns t f fall time - 25 40 ns g fs transfer conductance v ds =15v; i d = 6.3 a; see figure 13 -20-s source-drain diode v sd source-drain voltage i s = 2.3 a; v gs =0v; t j =25c; see figure 14 -0.71.1v t rr reverse recovery time i s = 6.3 a; di s /dt = -100 a/s; v gs =0v; v ds =25v; t j =25c -85-ns q r recovered charge - 0.3 - c
PSMN038-100K_2 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 02 ? 25 november 2009 6 of 12 nxp semiconductors PSMN038-100K n-channel trenchmos siliconmax standard level fet fig 5. output characteristics: drain current as a function of drain-source voltage; typical values fig 6. transfer characteristics: drain current as a function of gate-source voltage; typical values fig 7. sub-threshold drain current as a function of gate-source voltage fig 8. gate-source threshold voltage as a function of junction temperature 03ad98 0 10 20 30 40 50 012345 v ds (v) i d (a) 5 v 4.5 v 7 v 6 v v gs = 10 v 03ae00 0 10 20 30 40 50 02468 v gs (v) i d (a) v ds > i d x r dson t j = 150 c 25 c 03aa35 v gs (v) 06 4 2 10 ? 4 10 ? 5 10 ? 2 10 ? 3 10 ? 1 i d (a) 10 ? 6 min typ max t j ( c) ? 60 180 120 060 03aa32 2 3 1 4 5 v gs(th) (v) 0 max typ min
PSMN038-100K_2 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 02 ? 25 november 2009 7 of 12 nxp semiconductors PSMN038-100K n-channel trenchmos siliconmax standard level fet fig 9. drain-source on-state resistance as a function of drain current; typical values fig 10. normalized drain-source on-state resistance factor as a function of junction temperature fig 11. gate-source voltage as a function of gate charge; typical values fig 12. input, output and reverse transfer capacitances as a function of drain-source voltage; typical values 03ad99 0.03 0.04 0.05 0.06 0.07 0.08 0.09 0.1 01020304050 i d (a) r dson ( ) t j = 25 c v gs = 6 v 7 v 10 v 4.5 v 5 v 03aa29 0 1 2 3 -60 0 60 120 180 t j ( c) a 03ae04 0 2 4 6 8 10 0153045 q g (nc) v gs (v) i d = 6.3 a t j = 25 c v dd = 20 v 50 v 80 v 03ae03 10 2 10 3 10 4 10 ? 1 1 10 10 2 v ds (v) c iss , c oss , c rss (pf) c iss c oss c rss
PSMN038-100K_2 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 02 ? 25 november 2009 8 of 12 nxp semiconductors PSMN038-100K n-channel trenchmos siliconmax standard level fet fig 13. forward transconductance as a function of drain current; typical values fig 14. source current as a function of source-drain voltage; typical values 03ae01 0 10 20 30 40 0 1020304050 i d (a) g fs (s) t j = 25 c 150 c v ds > i d x r dson 03ae02 0 10 20 30 40 50 0 0.4 0.8 1.2 v sd (v) i s (a) t j = 25 c 150 c v gs = 0 v
PSMN038-100K_2 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 02 ? 25 november 2009 9 of 12 nxp semiconductors PSMN038-100K n-channel trenchmos siliconmax standard level fet 7. package outline fig 15. package outline sot96-1 (so8) unit a max. a 1 a 2 a 3 b p cd (1) e (2) (1) eh e ll p qz y w v references outline version european projection issue date iec jedec jeita mm inches 1.75 0.25 0.10 1.45 1.25 0.25 0.49 0.36 0.25 0.19 5.0 4.8 4.0 3.8 1.27 6.2 5.8 1.05 0.7 0.6 0.7 0.3 8 0 o o 0.25 0.1 0.25 dimensions (inch dimensions are derived from the original mm dimensions) notes 1. plastic or metal protrusions of 0.15 mm (0.006 inch) maximum per side are not included. 2. plastic or metal protrusions of 0.25 mm (0.01 inch) maximum per side are not included. 1.0 0.4 sot96-1 x w m a a 1 a 2 b p d h e l p q detail x e z e c l v m a (a ) 3 a 4 5 pin 1 index 1 8 y 076e03 ms-012 0.069 0.010 0.004 0.057 0.049 0.01 0.019 0.014 0.0100 0.0075 0.20 0.19 0.16 0.15 0.05 0.244 0.228 0.028 0.024 0.028 0.012 0.01 0.01 0.041 0.004 0.039 0.016 0 2.5 5 mm scale s o8: plastic small outline package; 8 leads; body width 3.9 mm sot96 -1 99-12-27 03-02-18
PSMN038-100K_2 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 02 ? 25 november 2009 10 of 12 nxp semiconductors PSMN038-100K n-channel trenchmos siliconmax standard level fet 8. revision history table 7. revision history document id release date data sheet status change notice supersedes PSMN038-100K_2 20091125 product data sheet - PSMN038-100K-01 modifications: ? the format of this data sheet has been redesigned to comply with the new identity guidelines of nxp semiconductors. ? legal texts have been adapted to the new company name where appropriate. PSMN038-100K-01 20010116 product specification - -
PSMN038-100K_2 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 02 ? 25 november 2009 11 of 12 nxp semiconductors PSMN038-100K n-channel trenchmos siliconmax standard level fet 9. legal information 9.1 data sheet status [1] please consult the most recently issued document before initiating or completing a design. [2] the term 'short data sheet' is explained in section "definitions". [3] the product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. the latest product status information is available on the internet at url http://www.nxp.com . 9.2 definitions draft ? the document is a draft version only. the content is still under internal review and subject to formal approval, which may result in modifications or additions. nxp semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall hav e no liability for the consequences of use of such information. short data sheet ? a short data sheet is an extract from a full data sheet with the same product type number(s) and title. a short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. for detailed and full information see the relevant full data sheet, which is available on request via the local nxp semiconductors sales office. in case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 9.3 disclaimers general ? information in this document is believed to be accurate and reliable. however, nxp semiconductors d oes not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. right to make changes ? nxp semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. this document supersedes and replaces all information supplied prior to the publication hereof. suitability for use ? nxp semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an nxp semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. nxp semiconductors accepts no liability for inclusion and/or use of nxp semiconductors products in su ch equipment or applications and therefore such inclusion and/or use is at the customer?s own risk. applications ? applications that are desc ribed herein for any of these products are for illustrative purpos es only. nxp semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. quick reference data ? the quick reference data is an extract of the product data given in the limiting values and characteristics sections of this document, and as such is not comp lete, exhaustive or legally binding. limiting values ? stress above one or more limiting values (as defined in the absolute maximum ratings system of iec 60134) may cause permanent damage to the device. limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the characteristics sections of this document is not implied. exposure to limiting values for extended periods may affect device reliability. terms and conditions of sale ? nxp semiconductors products are sold subject to the general terms and condit ions of commercial sale, as published at http://www.nxp.com/profile/terms , including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writ ing by nxp semiconductors. in case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. no offer to sell or license ? nothing in this document may be interpreted or construed as an offer to sell products t hat is open for acceptance or the grant, conveyance or implication of any lic ense under any copyrights, patents or other industrial or intellectual property rights. export control ? this document as well as the item(s) described herein may be subject to export control regulati ons. export might require a prior authorization from national authorities. 9.4 trademarks notice: all referenced brands, produc t names, service names and trademarks are the property of their respective owners. trenchmos ? is a trademark of nxp b.v. 10. contact information for more information, please visit: http://www.nxp.com for sales office addresses, please send an email to: salesaddresses@nxp.com document status [1] [2] product status [3] definition objective [short] data sheet development this document contains data from the object ive specification for product development. preliminary [short] data sheet qualification this document contains data from the preliminary specification. product [short] data sheet production this doc ument contains the pr oduct specification.
nxp semiconductors PSMN038-100K n-channel trenchmos siliconmax standard level fet ? nxp b.v. 2009. all rights reserved. for more information, please visit: http://www.nxp.com for sales office addresses, please se nd an email to: salesaddresses@nxp.com date of release: 25 november 2009 document identifier: PSMN038-100K_2 please be aware that important notices concerning this document and the product(s) described herein, have been included in section ?legal information?. 11. contents 1 product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 1.1 general description . . . . . . . . . . . . . . . . . . . . . .1 1.2 features and benefits . . . . . . . . . . . . . . . . . . . . .1 1.3 applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 1.4 quick reference data . . . . . . . . . . . . . . . . . . . . .1 2 pinning information . . . . . . . . . . . . . . . . . . . . . . .2 3 ordering information . . . . . . . . . . . . . . . . . . . . . .2 4 limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .2 5 thermal characteristics . . . . . . . . . . . . . . . . . . .4 6 characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .5 7 package outline . . . . . . . . . . . . . . . . . . . . . . . . . .9 8 revision history . . . . . . . . . . . . . . . . . . . . . . . . .10 9 legal information. . . . . . . . . . . . . . . . . . . . . . . . 11 9.1 data sheet status . . . . . . . . . . . . . . . . . . . . . . . 11 9.2 definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 9.3 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 9.4 trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 10 contact information. . . . . . . . . . . . . . . . . . . . . . 11

▲Up To Search▲

Price & Availability of PSMN038-100K

	To Download PSMN038-100K Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .